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| Infrared Emitting Diodes(GaAs) K DNH OESI EL-1ML2 DIMENSIONS The EL-1ML2, a high-power GaAs IRED mounted in a TO-18 type header with clear epoxy encapsulation, has wide beam angle and is relatively low-cost compared to TO-18 can-type devices. (Unit : mm) FEATURES UWide beam angle URelative low cost against metal can package ULow profile package APPLICATIONS UOptical switches U ncoders E UOptical readers MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I F IP PD Topr. Tstg. Tsol. Rating 5 100 1 170 -25~+100 -25~+100 260 Unit V mA A mW ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2...) 5 Symbol VF R I Ct PO *Ip **I *E Conditions F= I 50mA VR=5V f=1MHz F= I 50mA F= I 50mA F= I 50mA Min. Typ. 1.2 25 2.7 940 50 ae 2 3 Max. 1.5 10 Unit. V *I A pF mW/sr nm nm deg. - 1- Infrared Emitting Diodes(GaAs) EL-1ML2 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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